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Analysis of Semiconductor Thin Films – A Few Examples (Ref: Ellipso Technology) |
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1-1. SiO2 on c-Si |
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| Thickness |
106.234 nm |
| R.I. (@633 nm) |
1.5302 |
| Substrate |
Crystalline Silicon |
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 Thickness and refractive index of SiO2 film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta (symbols) and the best fit ones(lines) are compared. |
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1-2. Mapping of SiO2 Film Thickness on c-Si |
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Surface Mapping of Oxide Thickness
(SiO2 on c-Si, Thickness = 100 nm) |
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Captured image of SiO2 film thickness map. |
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1-3. SiO2 on SiC(SiC 표면을 산화시켜 SiO2층 생성) |
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| Thickness : SiO2 1299.946 nm |
| R.I. : Dispersion of SiO2 |
| Substrate : Silicon Carbide |
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2-1. Low Density Thin Al2O3 on c-Si (1/2) |
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| Thickness |
5.584 nm |
| R.I. (@633 nm) |
1.507 |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of very thin Al2O3 film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of Δ and ψ(symbols) and the best fit ones(lines) are compared |
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2-2. Low Density Thin Al2O3 on c-Si (2/2) |
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| Thickness |
21.198 nm |
| R.I. (@633 nm) |
1.669 |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of thin Al2O3 film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of Δ and ψ(symbols) and the best fit ones(lines) are compared. |
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2-3. Mapping of Al2O3 Film Thickness |
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| Diameter(mm) |
100 |
| Measurement Count |
25/25 |
| Thickness Average(nm) |
37.83 |
| Thickness S.D.(nm) |
0.085 |
| Refractive Index Average |
1.687 |
| Refractive Index S.D. |
0.001 |
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2D thickness map of Al2O3 film on c-Si. |
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3-1. SiN on c-Si |
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| Thickness |
85.863 nm |
| R.I. (@633 nm) |
2.0527 |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of SiN film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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3-2. SiN/SiO2 on c-Si |
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| Si3N4 Thickness |
219.3 nm |
| SiO2 Thickness |
223.8 nm |
| Substrate |
Crystalline Silicon |
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3-3. Si-rich SiN on c_Si |
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| Si-rich SiN Film |
| Composition Si3N4 (85.8 %) + a-Si (14.2 %) |
| Thickness 51.5 nm |
R.I.(@ 633 nm) 2.294,
Extinction Coeff.(@ 633 nm) 0.018 |
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| R.I Dispersion |
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3-4. Low Density SiN on c_Si |
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| Si3N4 |
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Density
R.I.(@633 nm)
Thickness
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83.0 %
1.840
87.0 nm |
| Substrate |
Crystalline Silicon |
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3-5. SiNx on Glass |
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| SiNx Thickness : 372.74 nm |
| R.I. (@633 nm) : 1.8823 |
| Substrate : Glass |
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4. Poly(Boron+Carbon) |
[TOP] |
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4-1. Poly(Boron+Carbon)/SiO2 on c-Si |
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Thickness, Poly
SiO2 |
105.99 nm
100.00 nm |
| R.I. |
Dispersion of Poly |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of Poly composed of Boron and Carbon on c-Si with oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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5-1. SrOx/SiO2 on c-Si(1/2) |
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Thickness, SrOx
SiO2 |
7.827 nm
2.0 nm |
| R.I. |
Dispersion of SrOx |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of SrOx film on c-Si substrate with native oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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5-2. SrOx/SiO2 on c-Si(2/2) |
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Thickness, SrOx
SiO2 |
2.854 nm
2.0 nm |
| R.I. |
Dispersion of SrOx |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of SrOx film on c-Si substrate with native oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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5-3. SrOx on Ru |
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| Thickness, SrOx |
11.675 nm |
| R.I. |
Dispersion of Ru |
| Substrate |
Ruthenium |
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Thickness of SrOx film on Ru substrate and refractive index of Ru obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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6-1. HfOx on c-Si |
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| Thickness, HfOx |
14.999 nm |
| R.I. |
Dispersion of HfOx |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of HfOx film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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7-1. ATO on c-Si |
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| Thickness, ATO |
30.537 nm |
| R.I. |
Dispersion of ATO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of ATO film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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8-1. PMMA on c-Si |
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| Thickness, PMMA |
197.374 nm |
| R.I. |
Dispersion of PMMA |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of PMMA film on c-Si substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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9-1. Si/SiGe20 on c-Si |
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Thickness, Si
SiGe20 |
160.257 nm
56.159 nm |
| R.I. |
Dispersion of SiGe20 |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index of Si/SiGe20 film on c-Si substrate obtained by analyzing spectro-ellipsometric data |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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10-1. AZO on Glass |
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| Layers (From Top) |
AZO (84 %) + vod (16 %) = 35.24 nm
AZO = 1098.36 nm |
| Substrate |
Glass |
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Thickness of AZO film with its microrough surface on glass substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. The graph on right shows the complex refractive index dispersion of AZO film. |
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10-2. AZO/SiO2 on c-Si |
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Thickness, AZO
SiO2 |
301.9 nm
100.00 nm |
| R.I. |
Dispersion of AZO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of AZO on c-Si with oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. |
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11-1. IZO on c-Si |
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| IZO Thickness |
136.2 nm |
| Substrate |
Crystalline Silicon |
| R.I. |
Dispersion of IZO |
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Thickness and refractive index dispersion of IZO on c-Si obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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12-1. ZnO on c-Si |
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Thickness, ZnO
SiO2 |
45.6 nm
105.69 nm |
| R.I. |
Dispersion of ZnO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of ZnO on c-Si with oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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13-1. IGZO on Glass |
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Thickness, IGZO(80%)+void(20%)
SiO2 |
8.648 nm
42.143 nm |
| R.I. |
Dispersion of IGZO |
| Substrate |
Glass |
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Thickness and refractive index dispersion of IGZO on glass obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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13-2. IGZO on c_Si |
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Thickness, IGZO
SiO2 |
62.685 nm
1.717 nm |
| R.I. |
Dispersion of IGZO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of IGZO on c-Si with native oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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13-3. IGZO/SiO2 on c-Si |
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Thickness, IGZO
SiO2 |
9.716 nm
206.003 nm |
| R.I. |
Dispersion of IGZO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of IGZO on c-Si with thick oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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14-1. ZTO/SiO2 on c-Si |
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Thickness, ZTO
SiO2 |
22.631 nm
304.844 nm |
| R.I. |
Dispersion of ZTO |
| Substrate |
Crystalline Silicon |
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Thickness and refractive index dispersion of ZTO on c-Si with thick oxide obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared |
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15-1. TiO2 on Gkass(1/2) |
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| Layers (From Top) |
TiO2 (27 %) + vod (73 %) = 11.42 nm
TiO2 = 30.58 nm |
| Substrate |
Glass |
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Thickness of TiO2 film with its microrough surface on glass substrate obtained by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. The graph on right shows the complex refractive index dispersion of TiO2 film |
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15-2. TiO2 on Gkass(2/2) |
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| TiO2 Thickness |
38.1 nm |
| Substrate |
Glass |
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The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines). |
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15-3. Ag Doped TiO2 on Glass |
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| Thickness : 157.65 nm |
| Substrate : Glass |
| R.I. Dispersion |
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15-4. Co Doped TiO2 on Glass |
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| Thickness : 165.65 nm |
| Substrate : Glass |
| R.I. Dispersion |
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16. ZrO2/SiO2 Multilayer |
[TOP] |
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16-1. ZrO2/SiO2 Multilayer on c_Si |
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| Layers from Top |
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| SiO2 |
92.6 nm |
| ZrO2 (96.0 %) + void (4.0 %) |
63.8 nm |
| SiO2 |
12.7 nm |
| ZrO2 (92.6 %) + void (7.4 %) |
28.6 nm |
| SiO2 |
114.9 nm |
| SiO2 (93.8 %) + c-Si (6.2 %) |
6.2 nm |
| Substrate |
Crystalline Silicon |
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Thickness and volume density of alternatively deposited SiO2 and ZrO2 multilayers on c-Si substrate are determined by analyzing spectro-ellipsometric data. |
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The measured ellipsometric spectra of Δ and ψ(dashed lines) and the best fit ones(solid lines) are compared. |
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17. ZnS-SiO2 on c-Si vs O2 Flow Rate |
[TOP] |
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Dependence of optical property of sputter grown ZnS-SiO2 film on Oxygen flow rate. |
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18. Depth Profiling of Si+ Implanted Si |
[TOP] |
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Comparison of X-TEM and SE for depth profiling of Si+ ion implanted silicon shows that results are in
excellent agreement each other. |
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Comparison between the experimentally measured (Δ, ψ) data and the calculated data using the model
shown above. (Vedam et al., App. Phys. Lett. 47(4) 339, 1985) |
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19. Depth Profiling of Oxygen Ion Implanted Silicon |
[TOP] |
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19-1. Depth Profiling of Oxygen Ion Implanted Silicon-on-Insulator(1/2) |
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Spectro-ellipsometric spectrum of tan(Psi) and the X-TEM image of an Oxygen ion implanted silicon. The measured spectro-ellipsometric constants are shown as dots and the best fit spectrum as a line. |
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| Layers (From Top) |
SiO2 (71 %) + Si (29 %) 1.55 nm
c-Si (96 %) + SiO2 (4 %) 1406 nm
c-Si (47 %) + SiO2 (53 %) 5.0 nm
SiO2 285.2 nm
c-Si (64 %) + SiO2 (36 %) 23.5 nm |
| Substrate |
Crystalline Silicon |
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Depth profiling of the above Oxygen implanted silicon sample is successfully achieved as a result of the modeling analysis SE data. (Narayan et al., App. Phys. Lett. 51(5) 343, 1987) |
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19-2. Depth Profiling of Oxygen Ion Implanted Silicon-on-Insulator(2/2) |
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Spectro-ellipsometric spectrum of cos(Delta) and the X-TEM image of an Oxygen ion implanted silicon. The measured spectro-ellipsometric constants are shown as dots and the best fit spectrum as a line. |
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| Layers (From Top) |
SiO2 2.35 nm
c-Si (95.3 %) + SiO2 (4.7 %) 28.0 nm
SiO2 401.2nm |
| Substrate |
Crystalline Silicon |
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Depth profiling of the above Oxygen implanted silicon sample is successfully achieved as a result of the modeling analysis SE data. (Narayan et al., App. Phys. Lett. 51(5) 343, 1987) |
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20-1. PR on c_Si |
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| Thickness : PR 1423.475 nm |
| R.I. : Dispersion of PR |
| Substrate : Crystalline Silicon |
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21-1. GST/SiO2 on c_Si(heating) |
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| Thickness : GST 12.322 nm |
| R.I. : Dispersion of GST |
| Substrate : Crystalline Silicon |
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21-2. GST/SiO2(650nm) on c_Si |
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| Thickness : GST 13.087 nm |
| R.I. : Dispersion of GST |
| Substrate : Crystalline Silicon |
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22-1. Ga2O3 on c_Si |
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| Thickness : Ga2O3 13.184 nm |
| R.I. : Dispersion of Ga2O3 |
| Substrate : Crystalline Silicon |
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CHINESE
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